smd type ic smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1. gate 2. drain 3. source features low on-state resistance r ds(on)1 =21m max. (v gs =10v,i d =9a) r ds(on)2 =40m max. (v gs =4.5v,i d =9a) low ciss: ciss = 570 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 16 v drain current(dc) i d(ds) 19 a drain current(pulse) *1 i d(pulse) 76 a total power dissipation (t c =25 ) p t 20 w total power dissipation p t 1w channel temperature tch 150 storage temperature t stg -55to+150 single avalanche current *2 i as 10 a single avalanche energy *2 e as 10 mj *1pw 10 s, duty cycle 1% *2. starting tch = 25 ,v dd =15v,r g =25 ,v gs =20 0 v, l = 100 h 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors 2SK3640 smd type smd type smd type smd type smd type ic smd type smd type ic smd type smd type smd type product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =30v,v gs =0v 10 a gate leakage current i gss v gs = 16 v, v ds =0v 10 a gate cut-off voltage v gs(off) v ds =10v,i d =1ma 1.5 2.5 v forward transfer admittance y fs v ds =10v,i d =9a 3.7 7.4 s r ds(on)1 v gs =10v,i d =9a 15 21 r ds(on)2 v gs =4.5v,i d =9a 24 40 input capacitance c iss v ds =10v 570 pf output capacitance c oss v gs =0v 160 pf feedback capacitance c rss f=1mhz 100 pf turn-on delay time t d(on) v dd =15v,i d =9a 7.7 ns rise time t r v gs =10v 4.7 ns turn-off delay time t d(off) r g =10 24 ns fall time t f 7ns total gate charge q g v dd =24v 14 nc gate-source charge q gs v gs =10v 2.4 nc gate-drain charge q gd i d =19a 4.3 nc diode forward voltage v f(s-d) i f =19a,v gs =0v 0.95 v reverse recovery time t rr i f =19a,v gs =0v 21 ns reverse recovery charge q rr di/dt = 100 a/ s 12 nc draintosourceon-stateresistance 2SK3640 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type smd type smd type smd type smd type ic smd type smd type ic smd type smd type smd type product specification
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